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Ultra Tec

FA-2000-P Plasma Decapsulator

Benchtop Plasma decap and depassivation with reactive ion etch

The FA-2000-P offers decapsulation and depassivation of packaged devices in an anisotropic manner for the worldwide Semiconductor industry.

Anisotrophic etching offers the aspect ratios needed to preserve the functionality of the device being treated. The system is capable of using any non-corrosive gas and uses mass flow controllers with precise gas mixing. This is important to achieve selectivity and other issues and other issues requiring attention in the de-passivation of devices.

FA-2000 offers leading edge perfomance in:

Failure Analysis for Semiconductors

  • Passivation removal - Isotropic polyimide removal, anisotropic or isotropic silicon nitride removal
  • Removal of interlayer dielectrics - packages and 150 mm or 200 mm wafers accommodated
  • Unsurpassed tabletop performance in single wafer cleaning, stripping, etching or reverse sputtering

 

Decapsulation

  • Industry leader and I.P. forerunner
  • First and only qualified system to interface with patented laser decapsulation technology
  • Etch rates for many compounds more than 1 mil per hour
  • Fastest removal of epoxy and plastic molding materials
  • Uses unique Fillerblast® technology

Other Applications

  • Research and development
  • Manufacture of wafer probe cards
  • Patterning and trenching in various materials
  • Material sciences

 

Note: ULTRA TEC is the representative for FA-2000 equipment in North America. Customers in other territories and for other applications should contact  BSET EQ directly

Click Additional Images to Enlarge



  • BGA Wirebonds exposed with FA-2000-P
    BGA Wirebonds exposed with FA-2000-P
  • 1st and Second Bonds revealed with FA-2000-P
    1st and Second Bonds revealed with FA-2000-P

Product Highlights

  • Quad input manifold provides uniform conductance of process gases and high etch uniformity on wafers
  • Operation within a wide pressure band enables fast isotropic etching at higher temperatures and exceptionally clean anisotropic etching at lower temperatures
  • Operation within a temperature range from 0 - 125°C enhances etch rates and selectivity
  • I.C.P , endpoint detection and other advanced options


 

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