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FA-2000 RIE System
Bench-top IC depassivation with reactive ion etch
Anisotrophic etching offers the aspect ratios needed to preserve the functionality of the device being treated. The system is capable of using any non-corrosive gas and uses mass flow controllers with precise gas mixing. This is important to achieve selectivity and other issues and other issues requiring attention in the de-passivation of devices.
FA-2000 offers leading edge perfomance in:
Failure Analysis for Semiconductors
- Passivation removal - Isotropic polyimide removal, anisotropic or isotropic silicon nitride removal
- Removal of interlayer dielectrics - packages and 150 mm or 200 mm wafers accommodated
- Unsurpassed tabletop performance in single wafer cleaning, stripping, etching or reverse sputtering
Other Applications
- Research and development
- Manufacture of wafer probe cards
- Patterning and trenching in various materials
- Material sciences
Click Additional Images to Enlarge
Side View of the FA-2000 Unit
Screen Shot of the FA-2000-P
Standard Recipes allow FA-2000 to achieve fast and effective passivation removal
Product Highlights
- Quad input manifold provides uniform conductance of process gases and high etch uniformity on wafers
- Operation within a wide pressure band enables fast isotropic etching at higher temperatures and exceptionally clean anisotropic etching at lower temperatures
- Operation within a temperature range from 0 - 125°C enhances etch rates and selectivity
- I.C.P , endpoint detection and other advanced options
Note: ULTRA TEC is the representative for FA-2000 equipment in North America. Customers in other territories and for other applications should contact BSET EQ directly.
